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Simulation results demonstrate that the DTMOS scheme reduces charge collection, and suppresses single-occasion effect-induced perturbation effectively within the cascode current mirror, whereas enjoying a detrimental function in basic present mirrors as a result of nicely-known bipolar impact. This approach offers a novel methodology for mitigating ASET disturbances for the designers of spaceborne ICs. The gentle output of deep ultraviolet (UV-C) AlGaN light-emitting diodes (LEDs) is limited due to their poor mild extraction efficiency (LEE). To enhance the LEE of AlGaN LEDs, we developed a fabrication technology to process AlGaN LEDs grown on SiC into skinny-film flip-chip LEDs (TFFC LEDs) with high LEE. This process transfers the AlGaN LED epi onto a new substrate by wafer-to-wafer bonding, and by removing the absorbing SiC substrate with a extremely selective SF6 plasma etch that stops on the AlN buffer layer.
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